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This power amplifier is designed for ISM applications, where high power and coherent signal are required. This amplifier uses the latest and most reliable LDMOS device, to ensure high efficiency, high gain with relevant ruggedness. The design of this amplifier is based on microstrip transformer.
Technical Specifications |
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|---|---|
| Frequency Range: | 80-120MHz |
| Output Power: | 1000W |
| Power Gain: | 23 dB |
| Supply Voltage: | 48V |
| Efficiency: | 75% |
| Quiescent Current: | 0.3 A |
| Input R Loss: | -15dB |
| Load Mismatch: | 2:1 full phase VSWR |
Mechanical |
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|---|---|
| Dimensions (LxWxH): | 135x60x30mm |
| (5.31’’ x 2.36’’ x 1.18’’) | |
| RF In/Out connection: | Solder tab |
| DC feed connection: | Screw |
| Carrier: | Copper |
| Weight: | 0.5Kg |
Environmental |
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|---|---|
| Operating temperature: | 0-80°C (carrier temperature) |
| Storage temperature: | -20 + 80°C (ambient temperature) |
| Humidity: | up to 90% no condensing |
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